Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: Intelligent power module FLAT-BASE type insulated packaging INTELLIGENT POWER MODULES FLAT-BASE type insulated packaging2391 -
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Category: IGBTtransistorDescription: FLAT -BASEFLAT-BASE TYPE INSULATED PACKAGE26451+$476.553110+$464.121350+$454.5902100+$451.2751200+$448.7887500+$445.47361000+$443.40162000+$441.3296 -
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Category: IGBTtransistorDescription: FLAT -BASEFLAT-BASE TYPE INSULATED PACKAGE69211+$383.433010+$373.430450+$365.7617100+$363.0944200+$361.0939500+$358.42651000+$356.75942000+$355.0923 -
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Category: IGBTtransistorDescription: FLAT -BASEFLAT-BASE TYPE INSULATED PACKAGE46821+$547.762310+$533.472850+$522.5176100+$518.7070200+$515.8491500+$512.03861000+$509.65712000+$507.2755 -
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Category: IGBTtransistorDescription: FLAT -BASEFLAT-BASE TYPE INSULATED PACKAGE59251+$558.717210+$544.141950+$532.9676100+$529.0808200+$526.1658500+$522.27911000+$519.84992000+$517.4207 -
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Category: MOSpipeDescription: MOS FETThe transistor is designed specifically for the application of VHF RF power amplifiers. MOS FET type transistor specifically designed for VHF RF power amplifiers applications.21135+$20.135750+$19.2752200+$18.7933500+$18.67291000+$18.55242500+$18.41475000+$18.32877500+$18.2426 -
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Category: IGBTtransistorDescription: High Power Switching Use Insulated Type for High Power Switches32041+$367.313510+$357.731450+$350.3851100+$347.8299200+$345.9134500+$343.35821000+$341.76122000+$340.1642 -
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Category: IGBTtransistorDescription: High Power Switching Use Insulated Type for High Power Switches8102 -
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Category: IGBTtransistorDescription: IGBTModule high-power switch using IGBT MODULES HIGH POWER SWITCHING USE11681+$351.011110+$341.854250+$334.8340100+$332.3922200+$330.5608500+$328.11901000+$326.59292000+$325.0668 -
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Category: IGBTtransistorDescription: High Power Switching Use80301+$869.895210+$839.372650+$835.5573100+$831.7419150+$825.6374250+$820.2960500+$814.95451000+$808.8500 -
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Category: IGBTtransistorDescription: High Power Switching Use Insulated Type for High Power Switches4100 -
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Category: IGBTtransistorDescription: High Power Switching Use61091+$2100.204710+$2081.111925+$2071.565550+$2062.0192100+$2052.4728150+$2042.9264250+$2033.3800500+$2023.8336 -
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Category: IGBTtransistorDescription: High Power Switching Use Insulated Type for High Power Switches5169 -
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Category: IGBTtransistorDescription: High Power Switching Use Insulated Type for High Power Switches2063 -
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Category: IGBTtransistorDescription: High Power Switching Use44181+$1266.366210+$1254.853825+$1249.097650+$1243.3414100+$1237.5852150+$1231.8289250+$1226.0727500+$1220.3165 -
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Category: Bipolar transistorDescription: 2SA1235 PNPTransistor -50V -200mA/-0.2A 200MHz 150~300mV/-0.3V SOT-23/SC-59 Marking/Marking ME Low Frequency Amplification197320+$0.089150+$0.0825100+$0.0792300+$0.0766500+$0.07461000+$0.07335000+$0.071910000+$0.0706 -
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Category: IGBTtransistorDescription: Medium power switches use insulated MEDIUM POWER SWITCHING USE INSULATED TYPE4176 -
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Category: MOSpipeDescription: High speed switch using HIGH-SPEED SWITCHING USE28141+$41.563010+$39.1782100+$37.4067250+$37.1341500+$36.86161000+$36.55502500+$36.28245000+$36.1121
